Formation of porous silicon by anodizing in the ultrasonic field

Keywords

porous silicon, silicon anodizing, ultrasound.

Cite as

Shepida M. V., Kuntyi О. І., Mazur A.S., and Sukhatskyi Yu.V. Formation of porous silicon by anodizing in the ultrasonic field. Physico¬chemical Mechanics of Materials. 2022. 58(1), 083-089.

Abstract

The results of studies of electrochemical dissolution of silicon at the anodic potential E = 3 V in the field of ultrasound in solutions of fluoric acid (HF) in dimethyl­sulfoxide (DMSO), dimethylformamide (DMF), acetonitrile (AN) are presented. It is shown that during anodizing, cylindrical pores with an average diameter of 150 nm are formed on the silicon surface, which are evenly distributed on the substrate. It is establi­shed that the geometry of silicon pores and the rate of their formation are influenced by the following main factors: the concentration of HF in solution, the duration of electroly­sis, the nature of the aprotic solvent. It is shown that the rate of formation of porous silicon (PSi) increases with increasing HF concentration and anode value. The influence of US on the anodizing process is explained. The results of scanning electron microscopy and histo­grams of particle size distribution depending on the conditions of anodic dissolution of silicon are presented.

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